IXFA30N60X

Obsolete

IXYS

MOSFET N-CH 600V 30A TO263

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Obsolete

IXYS

MOSFET N-CH 600V 30A TO263

Technical Specifications

Parameters and characteristics for this part

Specification	IXFA30N60X

Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	56 nC
Input Capacitance (Ciss) (Max) @ Vds	2270 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	500 W
Rds On (Max) @ Id, Vgs	155 mOhm
Supplier Device Package	TO-263AA (IXFA)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

Part	FET Type	Package / Case	Technology	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Vgs(th) (Max) @ Id	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)
IXYS IXFA30N60X	N-Channel	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	155 mOhm	-55 °C	150 °C	500 W	30 V	2270 pF	Surface Mount	4.5 V	TO-263AA (IXFA)	56 nC	10 V	30 A	600 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 600 V 30A (Tc) 500W (Tc) Surface Mount TO-263AA (IXFA)

Technical documentation and resources

No documents available