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IPP075N15N3GXKSA1 - TO-220-3

IPP075N15N3GXKSA1

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Infineon Technologies

POWER MOSFET, N CHANNEL, 150 V, 100 A, 0.0062 OHM, TO-220, THROUGH HOLE

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IPP075N15N3GXKSA1 - TO-220-3

IPP075N15N3GXKSA1

Active
Infineon Technologies

POWER MOSFET, N CHANNEL, 150 V, 100 A, 0.0062 OHM, TO-220, THROUGH HOLE

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIPP075N15N3GXKSA1
Current - Continuous Drain (Id) @ 25°C100 A
Drain to Source Voltage (Vdss)150 V
Drive Voltage (Max Rds On, Min Rds On)8 V, 10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs93 nC
Mounting TypeThrough Hole
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max) [Max]300 W
Rds On (Max) @ Id, Vgs7.5 mOhm
Supplier Device PackagePG-TO220-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 5.29
10$ 3.53
100$ 2.52
500$ 2.10
1000$ 2.04
NewarkEach 1$ 4.02
10$ 3.04
25$ 2.05
50$ 2.05
100$ 2.05
250$ 2.04
500$ 2.04

Description

General part information

IPP075 Series

The IPP075N15N3 G is a 150V N-channel Power MOSFET that achieves a reduction in RDS (on) of 40% and of 45% in Figure of Merit (FOM). The OptiMOS™ MOSFET offers high system efficiency and industry's lowest RDS (on) within the voltage classes. It is ideally suited for high frequency switching applications and optimized technology for DC-DC converters.

Documents

Technical documentation and resources