
IPP075N15N3GXKSA1
ActivePOWER MOSFET, N CHANNEL, 150 V, 100 A, 0.0062 OHM, TO-220, THROUGH HOLE
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IPP075N15N3GXKSA1
ActivePOWER MOSFET, N CHANNEL, 150 V, 100 A, 0.0062 OHM, TO-220, THROUGH HOLE
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Technical Specifications
Parameters and characteristics for this part
| Specification | IPP075N15N3GXKSA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 100 A |
| Drain to Source Voltage (Vdss) | 150 V |
| Drive Voltage (Max Rds On, Min Rds On) | 8 V, 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 93 nC |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) [Max] | 300 W |
| Rds On (Max) @ Id, Vgs | 7.5 mOhm |
| Supplier Device Package | PG-TO220-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
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Description
General part information
IPP075 Series
The IPP075N15N3 G is a 150V N-channel Power MOSFET that achieves a reduction in RDS (on) of 40% and of 45% in Figure of Merit (FOM). The OptiMOS™ MOSFET offers high system efficiency and industry's lowest RDS (on) within the voltage classes. It is ideally suited for high frequency switching applications and optimized technology for DC-DC converters.
Documents
Technical documentation and resources