C3D1P7060Q

Obsolete

Wolfspeed

DIODE SIL CARB 600V 9.7A 10QFN

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Obsolete

Wolfspeed

DIODE SIL CARB 600V 9.7A 10QFN

Technical Specifications

Parameters and characteristics for this part

Specification	C3D1P7060Q

Capacitance @ Vr, F	100 pF
Current - Average Rectified (Io)	9.7 A
Current - Reverse Leakage @ Vr	50 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	160 °C
Operating Temperature - Junction [Min]	-55 C
Package / Case	10-PowerTQFN
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	10-Power QFN (3.3x3.3)
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

DIODE SIL CARB 600V 9.7A 10QFN

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Reverse Recovery Time (trr)	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Capacitance @ Vr, F	Speed	Current - Average Rectified (Io)	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Package / Case	Mounting Type	Technology
Wolfspeed C3D1P7060Q	600 V	0 ns	-55 C	160 °C	100 pF	No Recovery Time	9.7 A	10-Power QFN (3.3x3.3)	1.7 V	50 µA	10-PowerTQFN	Surface Mount	SiC (Silicon Carbide) Schottky

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 600 V 9.7A Surface Mount 10-Power QFN (3.3x3.3)

Technical documentation and resources