C3D1P7060Q

Obsolete

Wolfspeed

DIODE SIL CARB 600V 9.7A 10QFN

Search across all available documentation for this part.

Obsolete

Wolfspeed

DIODE SIL CARB 600V 9.7A 10QFN

Technical Specifications

Parameters and characteristics for this part

Specification	C3D1P7060Q

Capacitance @ Vr, F	100 pF
Current - Average Rectified (Io)	9.7 A
Current - Reverse Leakage @ Vr	50 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	160 °C
Operating Temperature - Junction [Min]	-55 C
Package / Case	10-PowerTQFN
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	10-Power QFN (3.3x3.3)
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Reverse Recovery Time (trr)	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Capacitance @ Vr, F	Speed	Current - Average Rectified (Io)	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Package / Case	Mounting Type	Technology
Wolfspeed C3D1P7060Q	600 V	0 ns	-55 C	160 °C	100 pF	No Recovery Time	9.7 A	10-Power QFN (3.3x3.3)	1.7 V	50 µA	10-PowerTQFN	Surface Mount	SiC (Silicon Carbide) Schottky

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 600 V 9.7A Surface Mount 10-Power QFN (3.3x3.3)

Technical documentation and resources