Specification	SI4176DY-T1-GE3

Current - Continuous Drain (Id) (Tc)	12 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	15 nC
Input Capacitance (Ciss) (Max)	490 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package Length	0.154 in
Package Name	8-SOIC
Package Width	3.9 mm
Power Dissipation (Max)	2.4 W, 5 W
Rds On (Max)	20 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.2 V

SI4176 Series

Part	Vgs (Max)	Drain to Source Voltage (Vdss)	Gate Charge (Max)	Package Length	Package Name	Package Width	Mounting Type	Operating Temperature (Min)	Operating Temperature (Max)	Rds On (Max)	Current - Continuous Drain (Id) (Tc)	FET Type	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Power Dissipation (Max)	Vgs(th) (Max)	Technology	Input Capacitance (Ciss) (Max)
Vishay Dale SI4176DY-T1-GE3	20 V	30 V	15 nC	0.154 in	8-SOIC	3.9 mm	Surface Mount	-55 °C	150 °C	20 mOhm	12 A	N-Channel	10 V	4.5 V	2.4 W 5 W	2.2 V	MOSFET (Metal Oxide)	490 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Create a free account to access distributor pricing data.

3D models and CAD resources for this part

Technical documentation and resources