IXFL210N30P3

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IXYS

MOSFET N-CH 300V 108A ISOPLUS264

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IXYS

MOSFET N-CH 300V 108A ISOPLUS264

Technical Specifications

Parameters and characteristics for this part

Specification	IXFL210N30P3

Current - Continuous Drain (Id) @ 25°C	108 A
Drain to Source Voltage (Vdss)	300 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	268 nC
Input Capacitance (Ciss) (Max) @ Vds	16200 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-264AA, TO-264-3
Power Dissipation (Max) [Max]	520 W
Rds On (Max) @ Id, Vgs	16 mOhm
Supplier Device Package	ISOPLUS264™
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	5 V

Part	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Vgs (Max)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Supplier Device Package	Technology	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]
IXYS IXFL210N30P3	300 V	16 mOhm	20 V	Through Hole	16200 pF	268 nC	TO-264-3 TO-264AA	ISOPLUS264™	MOSFET (Metal Oxide)	108 A	-55 °C	150 °C	5 V	N-Channel	10 V	520 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	300	$ 22.48

General part information

N-Channel 300 V 108A (Tc) 520W (Tc) Through Hole ISOPLUS264™

Technical documentation and resources

No documents available