1011GN-2200VP
ActiveMicrochip Technology
1011GN-2200VP-POWER-TRANSISTOR
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1011GN-2200VP
ActiveMicrochip Technology
1011GN-2200VP-POWER-TRANSISTOR
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
Specification | 1011GN-2200VP |
---|---|
Current - Test | 300 mA |
Frequency [Max] | 1.09 GHz |
Frequency [Min] | 1.03 GHz |
Gain | 19.4 dB |
Package / Case | Module |
Power - Output | 2200 W |
Technology | HEMT |
Voltage - Rated | 150 V |
Voltage - Test | 50 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Distributor | Package | Quantity | $ | |
---|---|---|---|---|
Microchip Direct | N/A | 1 | $ 4287.41 | |
5 | $ 3689.65 | |||
10 | $ 3236.17 | |||
25 | $ 2885.76 | |||
50 | $ 2638.41 | |||
100 | $ 2432.28 | |||
250 | $ 2287.99 | |||
500 | $ 2205.55 | |||
1000 | $ 2164.32 | |||
5000 | $ 2143.70 |
1011GN-2200VP-Power-Transistor Series
1011GN-2200VP-Power-Transistor
Part | Gain | Package / Case | Current - Test | Power - Output | Technology | Voltage - Test | Frequency [Min] | Frequency [Max] | Voltage - Rated |
---|---|---|---|---|---|---|---|---|---|
Microchip Technology 1011GN-2200VP | 19.4 dB | Module | 300 mA | 2200 W | HEMT | 50 V | 1.03 GHz | 1.09 GHz | 150 V |
Description
General part information
1011GN-2200VP-Power-Transistor Series
1011GN-2200VP-Power-Transistor
Documents
Technical documentation and resources