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1011GN-2200VP

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Microchip Technology

1011GN-2200VP-POWER-TRANSISTOR

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1011GN-2200VP

Active
Microchip Technology

1011GN-2200VP-POWER-TRANSISTOR

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

Specification1011GN-2200VP
Current - Test300 mA
Frequency [Max]1.09 GHz
Frequency [Min]1.03 GHz
Gain19.4 dB
Package / CaseModule
Power - Output2200 W
TechnologyHEMT
Voltage - Rated150 V
Voltage - Test50 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
Microchip DirectN/A 1$ 4287.41
5$ 3689.65
10$ 3236.17
25$ 2885.76
50$ 2638.41
100$ 2432.28
250$ 2287.99
500$ 2205.55
1000$ 2164.32
5000$ 2143.70

1011GN-2200VP-Power-Transistor Series

1011GN-2200VP-Power-Transistor

PartGainPackage / CaseCurrent - TestPower - OutputTechnologyVoltage - TestFrequency [Min]Frequency [Max]Voltage - Rated
Microchip Technology
1011GN-2200VP
19.4 dB
Module
300 mA
2200 W
HEMT
50 V
1.03 GHz
1.09 GHz
150 V

Description

General part information

1011GN-2200VP-Power-Transistor Series

1011GN-2200VP-Power-Transistor

Documents

Technical documentation and resources