MJD42CQ-13

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Diodes Inc

PWR HI VOLTAGE TRANSISTOR TO252

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Diodes Inc

PWR HI VOLTAGE TRANSISTOR TO252

Technical Specifications

Parameters and characteristics for this part

Specification	MJD42CQ-13

Current - Collector Cutoff (Max) [Max]	1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce	30 hFE
Frequency - Transition	3 MHz
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power - Max [Max]	1.5 W
Qualification	AEC-Q101
Supplier Device Package	TO-252 (DPAK)
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	1.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]	100 V

PNP, 100V, 6A, TO252

Part	Vce Saturation (Max) @ Ib, Ic	Transistor Type	Qualification	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max [Max]	Frequency - Transition	Supplier Device Package	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Grade	Package / Case
Diodes Inc MJD42CQ-13	1.5 V	PNP	AEC-Q101	30 hFE	1.5 W	3 MHz	TO-252 (DPAK)	Surface Mount	-55 °C	150 °C	100 V	1 µA	Automotive	DPAK (2 Leads + Tab) SC-63 TO-252-3

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