STU5N62K3

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STMicroelectronics

TRANS MOSFET N-CH 620V 4.2A 3-PIN(3+TAB) IPAK TUBE

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STU5N62K3

Active

STMicroelectronics

TRANS MOSFET N-CH 620V 4.2A 3-PIN(3+TAB) IPAK TUBE

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STU5N62K3

Current - Continuous Drain (Id) @ 25°C	4.2 A
Drain to Source Voltage (Vdss)	620 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	26 nC
Input Capacitance (Ciss) (Max) @ Vds	680 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max)	70 W
Rds On (Max) @ Id, Vgs	1.6 Ohm
Supplier Device Package	TO-251 (IPAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

STU5N62 Series

TRANS MOSFET N-CH 620V 4.2A 3-PIN(3+TAB) IPAK TUBE

Part	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Supplier Device Package	Rds On (Max) @ Id, Vgs	FET Type	Vgs (Max)	Vgs(th) (Max) @ Id	Package / Case	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)
STMicroelectronics STU5N62K3	Through Hole	-55 °C	150 °C	4.2 A	620 V	TO-251 (IPAK)	1.6 Ohm	N-Channel	30 V	4.5 V	IPAK, TO-251-3 Short Leads, TO-251AA	70 W	680 pF	MOSFET (Metal Oxide)	26 nC	10 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 1.77
		75	$ 1.42
		150	$ 1.17
		525	$ 0.99
		1050	$ 0.84
		2025	$ 0.80
		5025	$ 0.77
		10050	$ 0.74

Description

General part information

STU5N62 Series

These devices are made using the SuperMESH3 Power MOSFET technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH technology combined with a new optimized vertical structure. The resulting product has an extremely low on resistance, superior dynamic performance and high avalanche capability, making it especially suitable for the most demanding applications.100% avalanche testedExtremely large avalanche performanceGate charge minimizedVery low intrinsic capacitanceImproved diode reverse recovery characteristicsZener-protected

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Technical documentation and resources