IXFN21N100Q

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IXYS

MOSFET N-CH 1000V 21A SOT-227B

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IXYS

MOSFET N-CH 1000V 21A SOT-227B

Technical Specifications

Parameters and characteristics for this part

Specification	IXFN21N100Q

Current - Continuous Drain (Id) @ 25°C	21 A
Drain to Source Voltage (Vdss)	1000 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	170 nC
Input Capacitance (Ciss) (Max) @ Vds	5900 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-227-4, miniBLOC
Power Dissipation (Max) [Max]	520 W
Rds On (Max) @ Id, Vgs	500 mOhm
Supplier Device Package	SOT-227B
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	5 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Package / Case	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Mounting Type	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Type
IXYS IXFN21N100Q	-55 °C	150 °C	MOSFET (Metal Oxide)	5 V	1000 V	SOT-227-4 miniBLOC	21 A	170 nC	10 V	SOT-227B	Chassis Mount	520 W	500 mOhm	5900 pF	20 V	N-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 1000 V 21A (Tc) 520W (Tc) Chassis Mount SOT-227B

Technical documentation and resources

No documents available