ZTX749_J61Z

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ON Semiconductor

TRANS PNP 25V 2A TO92-3

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Active

ON Semiconductor

TRANS PNP 25V 2A TO92-3

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General part information

Bipolar (BJT) Transistor PNP 25 V 2 A 100MHz 1 W Through Hole TO-92-3

Technical documentation and resources

Parameters and characteristics commom to parts in this series

Specification	ZTX749_J61Z	ZTX749 Series

Current - Collector (Ic) (Max) [Max]	2 A	2 A
Current - Collector Cutoff (Max) [Max]	100 nA	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100	100
Frequency - Transition	100 MHz	100 MHz
Mounting Type	Through Hole	Through Hole
Operating Temperature [Max]	150 °C	150 °C
Operating Temperature [Min]	-55 °C	-55 °C
Package / Case	TO-226-3, TO-92-3	TO-226-3, TO-92-3
Power - Max [Max]	1 W	1 W
Supplier Device Package	TO-92-3	TO-226, TO-92-3
Transistor Type	PNP	PNP
Vce Saturation (Max) @ Ib, Ic	500 mV	500 mV
Voltage - Collector Emitter Breakdown (Max)	25 V	25 V
Voltage - Collector Emitter Breakdown (Max)	-	35 V

TRANS PNP 35V 2A TO226

Part	Mounting Type	Transistor Type	Vce Saturation (Max) @ Ib, Ic	Package / Case	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]	Frequency - Transition	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max)
ON Semiconductor ZTX749A	Through Hole	PNP	500 mV	TO-226-3, TO-92-3	100 nA	1 W	-55 °C	150 °C	TO-226	100	35 V	100 MHz	2 A
ON Semiconductor ZTX749A	Through Hole	PNP	500 mV	TO-226-3, TO-92-3	100 nA	1 W	-55 °C	150 °C	TO-226	100	35 V	100 MHz	2 A
ON Semiconductor ZTX749_J61Z	Through Hole	PNP	500 mV	TO-226-3, TO-92-3	100 nA	1 W	-55 °C	150 °C	TO-92-3	100		100 MHz	2 A	25 V