IXKP13N60C5M

Obsolete

IXYS

MOSFET N-CH 600V 6.5A TO220ABFP

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Obsolete

IXYS

MOSFET N-CH 600V 6.5A TO220ABFP

Technical Specifications

Parameters and characteristics for this part

Specification	IXKP13N60C5M

Current - Continuous Drain (Id) @ 25°C	6.5 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	30 nC
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Rds On (Max) @ Id, Vgs	300 mOhm
Supplier Device Package	TO-220ABFP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Gate Charge (Qg) (Max) @ Vgs	Technology	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	FET Type	Drain to Source Voltage (Vdss)	Package / Case
IXYS IXKP13N60C5M	30 nC	MOSFET (Metal Oxide)	300 mOhm	3.5 V	6.5 A	20 V	-55 °C	150 °C	Through Hole	10 V	TO-220ABFP	N-Channel	600 V	TO-220-3 Full Pack
IXYS IXKP13N60C5	30 nC	MOSFET (Metal Oxide)	300 mOhm	3.5 V	13 A	20 V	-55 °C	150 °C	Through Hole	10 V	TO-220-3	N-Channel	600 V	TO-220-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 600 V 6.5A (Tc) Through Hole TO-220ABFP

Technical documentation and resources