STW13NK80Z

Obsolete

STMicroelectronics

MOSFET N-CH 800V 12A TO247-3

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Obsolete

STMicroelectronics

MOSFET N-CH 800V 12A TO247-3

Technical Specifications

Parameters and characteristics for this part

Specification	STW13NK80Z

Current - Continuous Drain (Id) @ 25°C	12 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	155 nC
Input Capacitance (Ciss) (Max) @ Vds	3480 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	230 W
Rds On (Max) @ Id, Vgs	650 mOhm
Supplier Device Package	TO-247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

Part	Rds On (Max) @ Id, Vgs	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Package / Case	Technology	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Power Dissipation (Max) [Max]
STMicroelectronics STW13NM60N	360 mOhm	Through Hole	11 A	-55 °C	150 °C	TO-247-3	10 V	N-Channel	TO-247-3	MOSFET (Metal Oxide)	30 nC	600 V	4 V	90 W	790 pF	25 V
STMicroelectronics STW13NK80Z	650 mOhm	Through Hole	12 A	-55 °C	150 °C	TO-247-3	10 V	N-Channel	TO-247-3	MOSFET (Metal Oxide)	155 nC	800 V	4.5 V		3480 pF	30 V	230 W
STMicroelectronics STW13N60M2	380 mOhm	Through Hole	11 A	-55 °C	150 °C	TO-247-3	10 V	N-Channel	TO-247-3	MOSFET (Metal Oxide)	17 nC	600 V	4 V		580 pF	25 V	110 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 800 V 12A (Tc) 230W (Tc) Through Hole TO-247-3

Technical documentation and resources