STX112

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STMicroelectronics

TRANS NPN DARL 100V 2A TO92-3

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STMicroelectronics

TRANS NPN DARL 100V 2A TO92-3

Technical Specifications

Parameters and characteristics for this part

Specification	STX112

Current - Collector (Ic) (Max) [Max]	2 A
Current - Collector Cutoff (Max)	2 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	1000 hFE
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-226-3, TO-92-3
Power - Max [Max]	1.2 W
Supplier Device Package	TO-92-3
Vce Saturation (Max) @ Ib, Ic [Max]	2.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]	100 V

TRANS NPN DARL 100V 2A TO92-3

Part	Vce Saturation (Max) @ Ib, Ic [Max]	Mounting Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector (Ic) (Max) [Max]	Current - Collector Cutoff (Max)	Package / Case	Power - Max [Max]	Operating Temperature	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]
STMicroelectronics STX112	2.5 V	Through Hole	1000 hFE	2 A	2 mA	TO-226-3, TO-92-3	1.2 W	150 °C	TO-92-3	100 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor NPN - Darlington 100 V 2 A 1.2 W Through Hole TO-92-3

Technical documentation and resources