ZTX857

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Diodes Inc

TRANS NPN 300V 3A E-LINE

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Diodes Inc

TRANS NPN 300V 3A E-LINE

Technical Specifications

Parameters and characteristics for this part

Specification	ZTX857

Current - Collector (Ic) (Max) [Max]	3 A
Current - Collector Cutoff (Max) [Max]	50 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100 hFE
Mounting Type	Through Hole
Operating Temperature [Max]	200 C
Operating Temperature [Min]	-55 °C
Package / Case	E-Line-3
Power - Max [Max]	1.2 W
Supplier Device Package	E-Line (TO-92 compatible)
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	250 mV
Voltage - Collector Emitter Breakdown (Max)	300 V

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Power - Max [Max]	Mounting Type	Transistor Type	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max) [Max]	Current - Collector (Ic) (Max) [Max]
Diodes Inc ZTX857	100 hFE	1.2 W	Through Hole	NPN	E-Line-3	-55 °C	200 C	E-Line (TO-92 compatible)	300 V	250 mV	50 nA	3 A
Diodes Inc ZTX857STOA	100 hFE	1.2 W	Through Hole	NPN	E-Line-3	-55 °C	200 C	E-Line (TO-92 compatible)	300 V	250 mV	50 nA	3 A
Diodes Inc ZTX857STZ	100 hFE	1.2 W	Through Hole	NPN	E-Line-3 Formed Leads	-55 °C	200 C	E-Line (TO-92 compatible)	300 V	250 mV	1 µA	3 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor NPN 300 V 3 A 80MHz 1.2 W Through Hole E-Line (TO-92 compatible)