IXXH40N65B4H1

Active

IXYS

TRANSISTOR: IGBT; GENX4™; 650V; 40A; 455W; TO247-3

Search across all available documentation for this part.

Active

IXYS

TRANSISTOR: IGBT; GENX4™; 650V; 40A; 455W; TO247-3

Technical Specifications

Parameters and characteristics for this part

Specification	IXXH40N65B4H1

Current - Collector (Ic) (Max)	120 A
Current - Collector Pulsed (Icm)	240 A
Gate Charge	77 nC
IGBT Type	PT
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-2
Power - Max [Max]	455 W
Reverse Recovery Time (trr)	120 ns
Supplier Device Package	TO-247AD
Switching Energy	560 µJ, 1.4 mJ
Td (on/off) @ 25°C	144 ns, 28 ns
Test Condition	15 V, 5 Ohm, 400 V, 40 A
Vce(on) (Max) @ Vge, Ic	2 V
Voltage - Collector Emitter Breakdown (Max)	650 V

Part	Vce(on) (Max) @ Vge, Ic	Switching Energy	Td (on/off) @ 25°C	Mounting Type	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Test Condition	Current - Collector Pulsed (Icm)	IGBT Type	Supplier Device Package	Supplier Device Package	Power - Max [Max]	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge	Reverse Recovery Time (trr)
IXYS IXXH40N65B4	1.8 V	1.4 mJ 560 µJ	28 ns 144 ns	Through Hole	650 V	120 A	5 Ohm 15 V 40 A 400 V	240 A	PT	IXXH	TO-247AD	455 W	TO-247-3	-55 °C	175 ░C	77 nC
IXYS IXXH40N65B4H1	2 V	1.4 mJ 560 µJ	28 ns 144 ns	Through Hole	650 V	120 A	5 Ohm 15 V 40 A 400 V	240 A	PT		TO-247AD	455 W	TO-247-2	-55 °C	175 ░C	77 nC	120 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

IGBT PT 650 V 120 A 455 W Through Hole TO-247AD

Technical documentation and resources

No documents available