AOTE21115C

Active

Alpha & Omega Semiconductor Inc.

MOSFET 2P-CH 20V 5.1A 8TSSOP

Search across all available documentation for this part.

Active

Alpha & Omega Semiconductor Inc.

MOSFET 2P-CH 20V 5.1A 8TSSOP

Technical Specifications

Parameters and characteristics for this part

Specification	AOTE21115C

Configuration	2 P-Channel (Dual) Common Drain
Current - Continuous Drain (Id) @ 25°C	5.1 A
Drain to Source Voltage (Vdss)	20 V
Gate Charge (Qg) (Max) @ Vgs [Max]	17 nC
Input Capacitance (Ciss) (Max) @ Vds	930 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-TSSOP
Package / Case [custom]	0.173 "
Package / Case [custom]	4.4 mm
Power - Max [Max]	1.5 W
Rds On (Max) @ Id, Vgs	40 mOhm
Supplier Device Package	8-TSSOP
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	950 mV

Part	Supplier Device Package	Power - Max [Max]	Technology	Current - Continuous Drain (Id) @ 25°C	Configuration	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Package / Case [custom]	Package / Case [custom]
Alpha & Omega Semiconductor Inc. AOTE21115C	8-TSSOP	1.5 W	MOSFET (Metal Oxide)	5.1 A	2 P-Channel (Dual) Common Drain	-55 °C	150 °C	20 V	950 mV	40 mOhm	930 pF	Surface Mount	17 nC	8-TSSOP	0.173 "	4.4 mm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 20V 5.1A (Ta) 1.5W (Ta) Surface Mount 8-TSSOP

Technical documentation and resources