STP80NE06-10

Obsolete

STMicroelectronics

MOSFET N-CH 60V 80A TO220AB

Search across all available documentation for this part.

Obsolete

STMicroelectronics

MOSFET N-CH 60V 80A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	STP80NE06-10

Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	140 nC
Input Capacitance (Ciss) (Max) @ Vds	10000 pF
Mounting Type	Through Hole
Operating Temperature	175 °C
Package / Case	TO-220-3
Power Dissipation (Max)	150 W
Rds On (Max) @ Id, Vgs	10 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Mounting Type	Supplier Device Package	Technology	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Package / Case	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs [Max]
STMicroelectronics STP80NE06-10	10 V	10 mOhm	60 V	Through Hole	TO-220	MOSFET (Metal Oxide)	20 V	10000 pF	N-Channel	TO-220-3	4 V	140 nC	175 °C	150 W
STMicroelectronics STP80NF03L	4.5 V 10 V		30 V	Through Hole	TO-220	MOSFET (Metal Oxide)	20 V		N-Channel	TO-220-3	2.5 V		175 °C		110 nC	300 W	5500 pF	4.5 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 60 V 80A (Tc) 150W (Tc) Through Hole TO-220

Technical documentation and resources