
STTH5R06G-TR
ObsoleteSTMicroelectronics
DIODE GEN PURP 600V 5A D2PAK
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STTH5R06G-TR
ObsoleteSTMicroelectronics
DIODE GEN PURP 600V 5A D2PAK
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | STTH5R06G-TR |
|---|---|
| Current - Average Rectified (Io) | 5 A |
| Current - Reverse Leakage @ Vr | 20 µA |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction [Max] | 175 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263AB, TO-263-3 |
| Reverse Recovery Time (trr) | 40 ns |
| Speed | 200 mA, 500 ns |
| Supplier Device Package | D2PAK |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) [Max] | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 2.9 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
STTH5R06-Y Series
The device is developed using ST's Turbo 2 600 V technology. It is well-suited as a boost diode, especially for use in continuous mode power factor corrections and hard switching conditions.
This device is also intended for use as a free wheeling diode in power supplies and other power switching applications.
Documents
Technical documentation and resources