Description
General part information
IDP20C65 Series
Rapid 2switching 650 V, 20 A emitter controlledpower silicon diodesin common cathode configuration and in a TO-220 package, allowing design optimization for more compact dimensions, easier assembly and consequently lower costs.
Technical Specifications
Parameters and characteristics for this part
| Specification | IDP20C65D2XKSA1 |
|---|---|
| Current - Average Rectified (Io) (per Diode) | 10 A |
| Current - Reverse Leakage | 40 µA |
| Diode Configuration | Common Cathode |
| Diode Pair Count | 1 pair |
| Mounting Type | Through Hole |
| Operating Temperature - Junction (Max) | 175 °C |
| Operating Temperature - Junction (Min) | -40 °C |
| Package / Case | TO-220-3 |
| Package Name | PG-TO220-3-1 |
| Reverse Recovery Time (trr) | 28 ns |
| Speed - Fast Recovery (Maximum) | 500 ns |
| Speed - Fast Recovery (Minimum) | 200 mA |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) | 2.2 V |
Pricing
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CAD
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