Specification	SIA462DJ-T1-GE3

Current - Continuous Drain (Id) (Tc)	12 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	17 nC
Input Capacitance (Ciss) (Max)	570 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SC-70-6
Package Name	PowerPAK® SC-70-6 Single
Power Dissipation (Max)	3.5 W, 19 W
Rds On (Max)	18 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.4 V

SIA462 Series

Part	Vgs(th) (Max)	Drain to Source Voltage (Vdss)	Gate Charge (Max)	Input Capacitance (Ciss) (Max)	Mounting Type	Vgs (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Power Dissipation (Max)	Package Name	Current - Continuous Drain (Id) (Tc)	Operating Temperature (Min)	Operating Temperature (Max)	FET Type	Technology	Rds On (Max)	Package / Case
Vishay Dale SIA462DJ-T1-GE3	2.4 V	30 V	17 nC	570 pF	Surface Mount	20 V	10 V	4.5 V	3.5 W 19 W	PowerPAK® SC-70-6 Single	12 A	-55 °C	150 °C	N-Channel	MOSFET (Metal Oxide)	18 mOhm	PowerPAK® SC-70-6

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