Specification	SIR624DP-T1-RE3

Current - Continuous Drain (Id) (Ta)	5.7 A
Current - Continuous Drain (Id) (Tc)	18.6 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On)	7.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	30 nC
Input Capacitance (Ciss) (Max)	1110 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SO-8
Package Name	PowerPAK® SO-8
Power Dissipation (Max)	52 W, 5 W
Rds On (Max)	60 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

SIR624 Series

Part	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Gate Charge (Max)	Input Capacitance (Ciss) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Package / Case	Power Dissipation (Max)	Vgs (Max)	Current - Continuous Drain (Id) (Tc)	Current - Continuous Drain (Id) (Ta)	FET Type	Vgs(th) (Max)	Technology	Package Name	Rds On (Max)	Drain to Source Voltage (Vdss)	Mounting Type
Vishay Dale SIR624DP-T1-RE3	10 V	7.5 V	30 nC	1110 pF	-55 °C	150 °C	PowerPAK® SO-8	5 W 52 W	20 V	18.6 A	5.7 A	N-Channel	4 V	MOSFET (Metal Oxide)	PowerPAK® SO-8	60 mOhm	200 V	Surface Mount
Vishay Dale SIR624DP-T1-GE3	10 V	7.5 V	23 nC	1110 pF	-55 °C	150 °C	PowerPAK® SO-8	52 W	20 V	18.6 A		N-Channel	4 V	MOSFET (Metal Oxide)	PowerPAK® SO-8	60 mOhm	200 V	Surface Mount

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