Specification	SSM6N39TU,LF

Channel Count	2
Configuration	N-Channel
Configuration - Features	Dual
Current - Continuous Drain (Id) (Ta)	1.6 A
Drain to Source Voltage (Vdss)	20 V
Gate Charge (Max)	7.5 nC
Input Capacitance (Ciss) (Max)	260 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	Flat Leads, 6-SMD
Package Name	UF6
Power - Max	0.5 W
Rds On (Max)	119 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	1 V

SSM6N39TU Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch x 2 MOSFET, 20 V, 1.6 A, 0.119 Ω@4V, SOT-363F(UF6)

Part	Input Capacitance (Ciss) (Max)	Gate Charge (Max)	Power - Max	Operating Temperature	Channel Count	Configuration	Configuration - Features	Technology	Rds On (Max)	Package Name	Package / Case	Mounting Type	Vgs(th) (Max)	Current - Continuous Drain (Id) (Ta)	Drain to Source Voltage (Vdss)
Toshiba Semiconductor and Storage SSM6N39TU,LF	260 pF	7.5 nC	0.5 W	150 °C	2	N-Channel	Dual	MOSFET (Metal Oxide)	119 mOhm	UF6	6-SMD Flat Leads	Surface Mount	1 V	1.6 A	20 V

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