Description
General part information
BSC096N10 Series
OptiMOS™ 5 100V power MOSFET in logic leveloffers a low gate charge, reducing switching losses without compromising conduction losses. This OptiMOS™ 5 (BSC096N10LS5) power MOSFET in SuperS08 package allows operations at high switching frequencies and it also provides a low gate threshold voltage which is allowing the MOSFET to be driven directly from microcontrollers. It is targetingcharger,adapterandtelecomapplications.
Technical Specifications
Parameters and characteristics for this part
| Specification | BSC096N10LS5ATMA1 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 40 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 14.6 nC |
| Input Capacitance (Ciss) (Max) | 2100 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerTDFN |
| Package Name | PG-TDSON-8-6 |
| Power Dissipation (Max) | 3 W, 83 W |
| Rds On (Max) | 9.6 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 2.3 V |
Pricing
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CAD
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Documents
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