Description
General part information
IPS60R Series
The 600V CoolMOS™ PFD7 superjunction MOSFET (IPS60R210PFD7S) complements theCoolMOS™7 offering for consumer applications. The IPS60R210PFD7S in a TO-251 IPAK SL package features RDS(on)of 210mOhm resulting in low switching losses. An implemented fast body diode enables a robust device and in turn reduced the bill-of-material (BOM) for the customer. This product family is tailored to ultrahigh power density as well as highest efficiency designs. The products primarily address ultrahigh density chargers, adapters and low-power motor drives. The 600V CoolMOS™ PFD7 offers improved light- and full-load efficiency overCoolMOS™P7 and CE MOSFET technologies resulting in an increase in power density by 1.8W/inch3.
Technical Specifications
Parameters and characteristics for this part
| Specification | IPS60R210PFD7SAKMA1 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 16 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 23 nC |
| Input Capacitance (Ciss) (Max) | 1015 pF |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -40 °C |
| Package / Case | TO-251-3 Short Leads, TO-251AA, IPAK |
| Package Name | PG-TO251-3 |
| Power Dissipation (Max) | 64 W |
| Rds On (Max) | 210 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4.5 V |
Pricing
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CAD
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