IRS2301STRPBF

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EICEDRIVER™ 600 V HIGH-SIDE AND LOW-SIDE DRIVER IC WITH TYPICAL 0.2 A SOURCE AND 0.35 A SINK OUTPUT CURRENTS. IT COMES WITH A FUNCTIONAL LEVELSHIFT SOIC 8N PACKAGE AND WORKS WITH MOSFETS.

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IRS2301STRPBF

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INFINEON

EICEDRIVER™ 600 V HIGH-SIDE AND LOW-SIDE DRIVER IC WITH TYPICAL 0.2 A SOURCE AND 0.35 A SINK OUTPUT CURRENTS. IT COMES WITH A FUNCTIONAL LEVELSHIFT SOIC 8N PACKAGE AND WORKS WITH MOSFETS.

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Description Specifications Series Pricing CAD Documents

Description

General part information

IRS2301 Series

EiceDRIVER™ 600 Vhigh and low-sidegate driver ICwith typical 0.2 A source and 0.35 A sink currents in 8 Lead SOIC package forIGBTsandMOSFETs.

Technical Specifications

Parameters and characteristics for this part

Specification	IRS2301STRPBF

Channel Type	Independent
Current - Peak Output (Sink)	0.35 A
Current - Peak Output (Source)	200 mA
Driven Configuration	Half-Bridge
Fall Time (Typ)	50 ns
Gate Channel	N-Channel
Gate Type	IGBT, MOSFET, N-Channel MOSFET
High Side Voltage - Max (Bootstrap)	600 V
Input Type	Non-Inverting
Logic Voltage - VIH	2.5 V
Logic Voltage - VIL	0.8 V
Mounting Type	Surface Mount
Number of Drivers	2
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-40 °C
Package Length	0.154 in
Package Name	8-SOIC
Package Width	3.9 mm
Rise Time (Typ)	130 ns
Voltage - Supply (Maximum)	20 V
Voltage - Supply (Minimum)	5 V

IRS2301 Series

Part	Logic Voltage - VIL	Logic Voltage - VIH	Voltage - Supply (Minimum)	Voltage - Supply (Maximum)	Package Name	Input Type	Package Length	Package Width	Number of Drivers	Gate Channel	Gate Type	Mounting Type	Operating Temperature (Min)	Operating Temperature (Max)	Current - Peak Output (Source)	Current - Peak Output (Sink)	High Side Voltage - Max (Bootstrap)	Rise Time (Typ)	Fall Time (Typ)	Driven Configuration	Channel Type
INFINEON IRS2301STRPBF	0.8 V	2.5 V	5 V	20 V	8-SOIC	Non-Inverting	0.154 in	3.9 mm	2	N-Channel	IGBT MOSFET N-Channel MOSFET	Surface Mount	-40 °C	150 °C	200 mA	0.35 A	600 V	130 ns	50 ns	Half-Bridge	Independent
INFINEON IRS2301SPBF	0.8 V	2.5 V	5 V	20 V	8-SOIC	Non-Inverting	0.154 in	3.9 mm	2	N-Channel	IGBT MOSFET N-Channel MOSFET	Surface Mount	-40 °C	150 °C	200 mA	0.35 A	600 V	130 ns	50 ns	Half-Bridge	Independent

Pricing

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