TK3R3E08QM,S1X
ActiveToshiba Semiconductor and Storage
12V - 300V MOSFETS, N-CH MOSFET, 80 V, 0.0033 Ω@10V, TO-220, U-MOSⅩ-H
TK3R3E08QM,S1X
ActiveToshiba Semiconductor and Storage
12V - 300V MOSFETS, N-CH MOSFET, 80 V, 0.0033 Ω@10V, TO-220, U-MOSⅩ-H
Description
General part information
TK3R3E08QM Series
12V - 300V MOSFETs, N-ch MOSFET, 80 V, 0.0033 Ω@10V, TO-220, U-MOSⅩ-H
Technical Specifications
Parameters and characteristics for this part
| Specification | TK3R3E08QM,S1X |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 120 A |
| Drain to Source Voltage (Vdss) | 80 V |
| Drive Voltage (Max Rds On) | 6 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 110 nC |
| Input Capacitance (Ciss) (Max) | 7670 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 175 °C |
| Package / Case | TO-220-3 |
| Package Name | TO-220 |
| Power Dissipation (Max) | 230 W |
| Rds On (Max) | 3.3 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 3.5 V |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2
Efficiency Evaluation and Loss Analysis of 300W isolated DC-DC converter
MOSFET Gate Drive Circuit: Power MOSFET Application Notes
Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes
Hints and Tips for Thermal Design for Discrete Semiconductor Devices
MOSFET Self-Turn-On Phenomenon
Hints and Tips for Thermal Design part3
U-MOSⅨ-H 60V Low VDS spike TPH1R306P1
Avalanche energy calculation
Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2
RC Snubbers for Step-Down Converters
Structures and Characteristics: Power MOSFET Application Notes
TK3R3E08QM Data sheet/English
Quick Reference Guide for Thermal Design for Discrete Semiconductor Devices
Calculating the Temperature of Discrete Semiconductor Devices
Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes
Resonant Circuits and Soft Switching
Selection Guide MOSFETs 2025 Rev1.0
Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes
Reverse Recovery Operation and Destruction of MOSFET Body Diode
Parasitic Oscillation and Ringing: Power MOSFET Application Notes
Electrical Characteristics: Power MOSFET Application Notes
TK3R3E08QM Data sheet/Japanese
Simplified CFD Model Application Note
Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes
MOSFET Secondary Breakdown
Maximum Ratings: Power MOSFET Application Notes
Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system
MOSFET SPICE model grade
Power Factor Correction (PFC) Circuits: Power MOSFET Application Notes
MOSFET Avalanche Ruggedness: Power MOSFET Application Notes
Motor Control (Vacuum Cleaners)
Derating of the MOSFET Safe Operating Area