IXTH48N20

Obsolete

IXYS

MOSFET N-CH 200V 48A TO247

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Obsolete

IXYS

MOSFET N-CH 200V 48A TO247

Technical Specifications

Parameters and characteristics for this part

Specification	IXTH48N20

Current - Continuous Drain (Id) @ 25°C	48 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	110 nC
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	275 W
Rds On (Max) @ Id, Vgs [Max]	50 mOhm
Supplier Device Package	TO-247 (IXTH)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Mounting Type	Technology	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	FET Type	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds
IXYS IXTH48N20	200 V	48 A	50 mOhm	-55 °C	150 °C	TO-247 (IXTH)	Through Hole	MOSFET (Metal Oxide)	275 W	4 V	10 V	110 nC	TO-247-3	N-Channel	20 V
IXYS IXTH48N15	150 V	48 A	32 mOhm	-55 °C	150 °C	TO-247 (IXTH)	Through Hole	MOSFET (Metal Oxide)	180 W		10 V	140 nC	TO-247-3	N-Channel	20 V	3200 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 200 V 48A (Tc) 275W (Tc) Through Hole TO-247 (IXTH)

Technical documentation and resources

No documents available