STW50N65DM2AG

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STMicroelectronics

MOSFET, AEC-Q101, N-CH, 650V, 38A, 300W ROHS COMPLIANT: YES

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Active

STMicroelectronics

MOSFET, AEC-Q101, N-CH, 650V, 38A, 300W ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	STW50N65DM2AG

Current - Continuous Drain (Id) @ 25°C	28 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	70 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	3200 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	300 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	87 mOhm
Supplier Device Package	TO-247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	5 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Grade	Operating Temperature [Min]	Operating Temperature [Max]	Qualification	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Technology	Current - Continuous Drain (Id) @ 25°C	Package / Case	Vgs (Max)
STMicroelectronics STW50N65DM2AG	70 nC	Through Hole	300 W	87 mOhm	3200 pF	TO-247-3	650 V	5 V	Automotive	-55 °C	150 °C	AEC-Q101	10 V	N-Channel	MOSFET (Metal Oxide)	28 A	TO-247-3	25 V

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General part information

N-Channel 650 V 28A (Tc) 300W (Tc) Through Hole TO-247-3

Technical documentation and resources