Specification	IRFD224

Current - Continuous Drain (Id) (Ta)	630 mA
Drain to Source Voltage (Vdss)	250 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	14 nC
Input Capacitance (Ciss) (Max)	260 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package Length	0.3 in
Package Name	4-DIP, 4-HVMDIP
Package Width	7.62 mm
Power Dissipation (Max)	1 W
Rds On (Max)	1.1 Ohm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

IRFD224 Series

Part	Mounting Type	FET Type	Operating Temperature (Min)	Operating Temperature (Max)	Vgs(th) (Max)	Input Capacitance (Ciss) (Max)	Rds On (Max)	Drive Voltage (Max Rds On, Min Rds On)	Technology	Gate Charge (Max)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) (Ta)	Package Name	Power Dissipation (Max)	Vgs (Max)	Package Width	Package Length
Vishay Dale IRFD224PBF	Through Hole	N-Channel	-55 °C	150 °C	4 V	260 pF	1.1 Ohm	10 V	MOSFET (Metal Oxide)	14 nC	250 V	630 mA	4-DIP 4-HVMDIP	1 W	20 V	7.62 mm	0.3 in
Vishay Dale IRFD224	Through Hole	N-Channel	-55 °C	150 °C	4 V	260 pF	1.1 Ohm	10 V	MOSFET (Metal Oxide)	14 nC	250 V	630 mA	4-DIP 4-HVMDIP	1 W	20 V	7.62 mm	0.3 in

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