Specification	STP5NB40

Current - Continuous Drain (Id) (Tc)	4.7 A
Drain to Source Voltage (Vdss)	400 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	20 nC
Input Capacitance (Ciss) (Max)	405 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Package Name	TO-220
Power Dissipation (Max)	80 W
Rds On (Max)	1.8 Ohm, 1.8 Ohm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max)	5 V

STP5N Series

Part	Power Dissipation (Max)	Vgs (Max)	Input Capacitance (Ciss) (Max)	Vgs(th) (Max)	Gate Charge (Max)	Operating Temperature	Technology	Package / Case	Package Name	FET Type	Drain to Source Voltage (Vdss)	Mounting Type	Rds On (Max)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) (Tc)	Operating Temperature (Min)	Operating Temperature (Max)
STMicroelectronics STP5NB40	80 W	30 V	405 pF	5 V	20 nC	150 °C	MOSFET (Metal Oxide)	TO-220-3	TO-220	N-Channel	400 V	Through Hole	1.8 Ohm 1.8 Ohm	10 V	4.7 A
STMicroelectronics STP5N52K3	70 W	30 V	450 pF	4.5 V	14 nC		MOSFET (Metal Oxide)	TO-220-3	TO-220	N-Channel	525 V	Through Hole	1.5 Ohm	10 V	4.4 A	-55 °C	150 °C
STMicroelectronics STP5NK65Z	85 W	30 V	680 pF	4.5 V	35 nC		MOSFET (Metal Oxide)	TO-220-3	TO-220	N-Channel	650 V	Through Hole	1.8 Ohm	10 V	5 A	-55 °C	150 °C

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