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BSD214SNH6327XTSA1

BSD214SNH6327XTSA1

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INFINEON

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 200 V ; SUPERSO8 5X6 PACKAGE; 90 MOHM;

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BSD214SNH6327XTSA1

BSD214SNH6327XTSA1

Active
INFINEON

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 200 V ; SUPERSO8 5X6 PACKAGE; 90 MOHM;

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Description

General part information

BSD214 Series

Infineon technologies offers automotive and industrial manufacturers a broad portfolio of N and P-Channel Small Signal MOSFETs that meet and exceed the highest quality requirements in well-known industry standard packages. With unmatched levels of reliability and manufacturing capacity these components are ideally suited for a wide variety of applications including LED Lighting, ADAS, body control units, SMPS and Motor Control.

Technical Specifications

Parameters and characteristics for this part

SpecificationBSD214SNH6327XTSA1
Current - Continuous Drain (Id) (Ta)1.5 A
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On)2.5 V
Drive Voltage (Min Rds On)4.5 V
FET TypeN-Channel
Gate Charge (Max)0.8 nC
GradeAutomotive
Input Capacitance (Ciss) (Max)143 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / Case6-VSSOP, SOT-363, SC-88
Package NamePG-SOT363-PO
Power Dissipation (Max)500 mW
QualificationAEC-Q101
Rds On (Max)140 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)12 V
Vgs(th) (Max)1.2 V

Pricing

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CAD

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