MMDT4403-7-F

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Diodes Inc

TRANS GP BJT PNP 40V 0.6A 200MW 6-PIN SOT-363 T/R

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Diodes Inc

TRANS GP BJT PNP 40V 0.6A 200MW 6-PIN SOT-363 T/R

Technical Specifications

Parameters and characteristics for this part

Specification	MMDT4403-7-F

Current - Collector (Ic) (Max) [Max]	600 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100
Frequency - Transition	200 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-TSSOP, SC-88, SOT-363
Power - Max [Max]	200 mW
Supplier Device Package	SOT-363
Transistor Type	2 PNP (Dual)
Vce Saturation (Max) @ Ib, Ic	750 mV
Voltage - Collector Emitter Breakdown (Max)	40 V

Part	Power - Max [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Frequency - Transition	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Voltage - Collector Emitter Breakdown (Max)	Package / Case	Current - Collector (Ic) (Max) [Max]	Transistor Type	Vce Saturation (Max) @ Ib, Ic
Diodes Inc MMDT4403-7-F	200 mW	100	200 MHz	SOT-363	-55 °C	150 °C	Surface Mount	40 V	6-TSSOP SC-88 SOT-363	600 mA	2 PNP (Dual)	750 mV

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor Array 2 PNP (Dual) 40V 600mA 200MHz 200mW Surface Mount SOT-363

Technical documentation and resources