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ONSONS2SJ661-1E

IRLU3636PBF

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INFINEON

IR MOSFET™ N-CHANNEL MOSFET ; IPAK TO-251 PACKAGE; 6.8 MOHM;

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ONSONS2SJ661-1E

IRLU3636PBF

Active
INFINEON

IR MOSFET™ N-CHANNEL MOSFET ; IPAK TO-251 PACKAGE; 6.8 MOHM;

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Description

General part information

IRLU3636 Series

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Technical Specifications

Parameters and characteristics for this part

SpecificationIRLU3636PBF
Current - Continuous Drain (Id) (Tc)50 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)49 nC
Input Capacitance (Ciss) (Max)3779 pF
Mounting TypeThrough Hole
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-251-3 Short Leads, TO-251AA, IPAK
Package NameIPAK
Power Dissipation (Max)143 W
Rds On (Max)6.8 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)16 V
Vgs(th) (Max)2.5 V

Pricing

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CAD

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