IXTH06N220P3HV

Obsolete

IXYS

MOSFET N-CH 2200V 600MA TO247HV

Search across all available documentation for this part.

Obsolete

IXYS

MOSFET N-CH 2200V 600MA TO247HV

Technical Specifications

Parameters and characteristics for this part

Specification	IXTH06N220P3HV

Drain to Source Voltage (Vdss)	2200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	10.4 nC
Input Capacitance (Ciss) (Max) @ Vds	290 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3 Variant
Power Dissipation (Max)	104 W
Rds On (Max) @ Id, Vgs	80 Ohm
Supplier Device Package	TO-247HV
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Drain to Source Voltage (Vdss)	Package / Case	Power Dissipation (Max)	FET Type	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Technology	Vgs (Max)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package
IXYS IXTH06N220P3HV	2200 V	TO-247-3 Variant	104 W	N-Channel	80 Ohm	-55 °C	150 °C	10.4 nC	10 V	Through Hole	MOSFET (Metal Oxide)	20 V	4 V	290 pF	TO-247HV

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 2200 V 600mA (Tc) 104W (Tc) Through Hole TO-247HV

Technical documentation and resources

No documents available