IXFC15N80Q

Obsolete

IXYS

MOSFET N-CH 800V 13A ISOPLUS220

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Obsolete

IXYS

MOSFET N-CH 800V 13A ISOPLUS220

Technical Specifications

Parameters and characteristics for this part

Specification	IXFC15N80Q

Current - Continuous Drain (Id) @ 25°C	13 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	90 nC
Input Capacitance (Ciss) (Max) @ Vds	4300 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	ISOPLUS220™
Power Dissipation (Max) [Max]	230 W
Supplier Device Package	ISOPLUS220™
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

Part	Current - Continuous Drain (Id) @ 25°C	Technology	Vgs (Max)	Mounting Type	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]
IXYS IXFC15N80Q	13 A	MOSFET (Metal Oxide)	20 V	Through Hole	N-Channel	90 nC	230 W	4.5 V	4300 pF	800 V	10 V	ISOPLUS220™	ISOPLUS220™	150 °C	-40 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 800 V 13A (Tc) 230W (Tc) Through Hole ISOPLUS220™

Technical documentation and resources

No documents available