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UPD48576118F1-E18-DW1-A - MAXMAXDS3141N

UPD48576118F1-E18-DW1-A

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Renesas Electronics Corporation

576M-BIT LOW LATENCY DRAM SEPARATE I/O

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UPD48576118F1-E18-DW1-A - MAXMAXDS3141N

UPD48576118F1-E18-DW1-A

Active
Renesas Electronics Corporation

576M-BIT LOW LATENCY DRAM SEPARATE I/O

Deep-Dive with AI

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 4$ 75.64

Description

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UPD48576118F1-E18-DW1-A Series

The µPD48576118F1 is a 33, 554, 432 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell. The µPD48576118F1 integrate unique synchronous peripheral circuitry and a burst counter. All input registers controlled by an input clock pair (CK and CK#) are latched on the positive edge of CK and CK#. These products are suitable for application which require synchronous operation, High-Speed, low voltage, high density and wide bit configuration.

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