IXFB70N60Q2

IXYS

MOSFET N-CH 600V 70A PLUS264

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IXYS

MOSFET N-CH 600V 70A PLUS264

Technical Specifications

Parameters and characteristics for this part

Specification	IXFB70N60Q2

Current - Continuous Drain (Id) @ 25°C	70 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	265 nC
Input Capacitance (Ciss) (Max) @ Vds	12000 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-264AA, TO-264-3
Power Dissipation (Max)	890 W
Rds On (Max) @ Id, Vgs	88 mOhm
Supplier Device Package	PLUS264™
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5.5 V

Part	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Technology	Vgs(th) (Max) @ Id	FET Type	Rds On (Max) @ Id, Vgs	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)
IXYS IXFB70N60Q2	PLUS264™	-55 °C	150 °C	70 A	30 V	MOSFET (Metal Oxide)	5.5 V	N-Channel	88 mOhm	Through Hole	265 nC	12000 pF	TO-264-3 TO-264AA	600 V	10 V	890 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	25	$ 27.25

General part information

N-Channel 600 V 70A (Tc) 890W (Tc) Through Hole PLUS264™

Technical documentation and resources

No documents available