Description
General part information
IPP330P10 Series
OptiMOS™P-channel MOSFETs 100Vin TO-220 package represents the new technology targeted for battery management, load switch and reverse polarity protection applications. The main advantage of a P-channel device is the reduction of design complexity in medium and low power applications. Its easy interface to MCU, fast switching as well as avalanche ruggedness makes it suitable for high quality demanding applications. It is available in normal level featuring a wide RDS(on)range and improves efficiency at low loads due to low Qg.
Technical Specifications
Parameters and characteristics for this part
| Specification | IPP330P10NMAKSA1 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 6.9 A |
| Current - Continuous Drain (Id) (Tc) | 62 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | P-Channel |
| Gate Charge (Max) | 236 nC |
| Input Capacitance (Ciss) (Max) | 11000 pF |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-220-3 |
| Package Name | PG-TO220-3 |
| Power Dissipation (Max) | 300 W, 3.8 W |
| Rds On (Max) | 33 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources