Specification	SI4456DY-T1-E3

Current - Continuous Drain (Id) (Tc)	33 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	122 nC, 122 nC
Input Capacitance (Ciss) (Max)	5670 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package Length	0.154 in
Package Name	8-SOIC
Package Width	3.9 mm
Power Dissipation (Max)	3.5 W, 7.8 W
Rds On (Max)	3.8 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.8 V

SI4456 Series

Part	Mounting Type	Package Length	Package Name	Package Width	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max)	Power Dissipation (Max)	Current - Continuous Drain (Id) (Tc)	Vgs (Max)	Gate Charge (Max)	FET Type	Rds On (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Technology	Vgs(th) (Max)	Operating Temperature (Min)	Operating Temperature (Max)
Vishay Dale SI4456DY-T1-E3	Surface Mount	0.154 in	8-SOIC	3.9 mm	40 V	5670 pF	3.5 W 7.8 W	33 A	20 V	122 nC 122 nC	N-Channel	3.8 mOhm	10 V	4.5 V	MOSFET (Metal Oxide)	2.8 V	-55 °C	150 °C

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