Specification	IR2152S

Channel Type	Synchronous
Current - Peak Output (Sink)	250 mA
Current - Peak Output (Source)	0.125 A
Driven Configuration	Half-Bridge
Fall Time (Typ)	40 ns
Gate Channel	N-Channel
Gate Type	IGBT, N-Channel MOSFET, MOSFET
High Side Voltage - Max (Bootstrap)	600 V
Input Type	RC Input Circuit
Mounting Type	Surface Mount
Number of Drivers	2
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-40 °C
Package Length	0.154 in
Package Name	8-SOIC
Package Width	3.9 mm
Rise Time (Typ)	80 ns
Voltage - Supply (Maximum)	20 V
Voltage - Supply (Minimum)	10 VDC

IR2152 Series

Part	Gate Type	Driven Configuration	High Side Voltage - Max (Bootstrap)	Mounting Type	Input Type	Voltage - Supply (Minimum)	Voltage - Supply (Maximum)	Channel Type	Package Name	Number of Drivers	Gate Channel	Current - Peak Output (Sink)	Current - Peak Output (Source)	Package Length	Package Width	Fall Time (Typ)	Rise Time (Typ)	Operating Temperature (Min)	Operating Temperature (Max)
INFINEON IR2152	IGBT MOSFET N-Channel MOSFET	Half-Bridge	600 V	Through Hole	RC Input Circuit	10 VDC	20 V	Synchronous	8-DIP 8-PDIP	2	N-Channel	250 mA	0.125 A	0.3 in	7.62 mm	40 ns	80 ns	-40 °C	150 °C
INFINEON IR2152S	IGBT MOSFET N-Channel MOSFET	Half-Bridge	600 V	Surface Mount	RC Input Circuit	10 VDC	20 V	Synchronous	8-SOIC	2	N-Channel	250 mA	0.125 A	0.154 in	3.9 mm	40 ns	80 ns	-40 °C	150 °C
INFINEON IR2152STR	IGBT MOSFET N-Channel MOSFET	Half-Bridge	600 V	Surface Mount	RC Input Circuit	10 VDC	20 V	Synchronous	8-SOIC	2	N-Channel	250 mA	0.125 A	0.154 in	3.9 mm	40 ns	80 ns	-40 °C	150 °C

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