STP11N52K3

Obsolete

STMicroelectronics

MOSFET N-CH 525V 10A TO220

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Obsolete

STMicroelectronics

MOSFET N-CH 525V 10A TO220

Technical Specifications

Parameters and characteristics for this part

Specification	STP11N52K3

Current - Continuous Drain (Id) @ 25°C	10 A
Drain to Source Voltage (Vdss)	525 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	51 nC
Input Capacitance (Ciss) (Max) @ Vds	1400 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	125 W
Rds On (Max) @ Id, Vgs	510 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

Part	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Technology	Power Dissipation (Max)	Vgs (Max)	FET Type	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id
STMicroelectronics STP11N52K3	10 A	510 mOhm	TO-220-3	-55 °C	150 °C	1400 pF	Through Hole	TO-220	10 V	MOSFET (Metal Oxide)	125 W	30 V	N-Channel	525 V	51 nC	4.5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 525 V 10A (Tc) 125W (Tc) Through Hole TO-220

Technical documentation and resources