SB1100E-G

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Comchip Technology

DIODE SCHOTTKY 100V 1A DO41

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Comchip Technology

DIODE SCHOTTKY 100V 1A DO41

Technical Specifications

Parameters and characteristics for this part

Specification	SB1100E-G

Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	500 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	DO-204AL, DO-41, Axial
Speed	200 mA, 500 ns
Supplier Device Package	DO-41
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	100 V
Voltage - Forward (Vf) (Max) @ If	850 mV

DIODE SCHOTTKY 100V 1A DO41

Part	Technology	Mounting Type	Speed	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Current - Reverse Leakage @ Vr
Comchip Technology SB1100E-G	Schottky	Through Hole	200 mA, 500 ns	150 °C	-65 C	Axial, DO-204AL, DO-41	100 V	1 A	850 mV	DO-41	500 µA

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General part information

Diode 100 V 1A Through Hole DO-41

Technical documentation and resources

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