Description
General part information
BAT2402 Series
This Infineon RF Schottky Diode is a silicon low barrier N-type device with an integrated guard ring on-chip for overvoltage protection. Its low barrier height, small forward voltage and low junction capacitance make BAT24-02ELS a suitable choice for mixer and detector functions in applications with frequencies are as high as 24 GHz.
Technical Specifications
Parameters and characteristics for this part
| Specification | BAT2402ELSE6327XTSA1 |
|---|---|
| Capacitance | 0.2 pF, 0.23 pF |
| Current - Max | 110 mA |
| Diode Type | Schottky, Single |
| Operating Temperature | 150 °C |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 0201 (0603 Metric) |
| Package Name | PG-TSSLP-2-3, PG-TSSLP-2-1 |
| Power Dissipation (Max) | 100 mW |
| Resistance | 10 Ohm |
| Voltage - Peak Reverse (Max) | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources