VN2460N3-G-P014
ActiveMOSFET, N-CHANNEL ENHANCEMENT-MODE, 600V, 20 OHM
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VN2460N3-G-P014
ActiveMOSFET, N-CHANNEL ENHANCEMENT-MODE, 600V, 20 OHM
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Technical Specifications
Parameters and characteristics commom to parts in this series
| Specification | VN2460N3-G-P014 | VN2460 Series |
|---|---|---|
| - | - | |
| Current - Continuous Drain (Id) @ 25°C | 160 mA | 160 - 200 mA |
| Drain to Source Voltage (Vdss) | 600 V | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V | 4.5 - 10 V |
| FET Type | N-Channel | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 150 pF | 150 pF |
| Mounting Type | Through Hole | Through Hole, Surface Mount |
| Operating Temperature [Max] | 150 °C | 150 °C |
| Operating Temperature [Min] | -55 °C | -55 °C |
| Package / Case | TO-226-3, TO-92-3 | TO-226-3, TO-92-3, TO-243AA |
| Power Dissipation (Max) | 1 W | 1 W |
| Rds On (Max) @ Id, Vgs | 20 Ohm | 20 Ohm |
| Supplier Device Package | TO-92-3 | TO-92-3, TO-243AA (SOT-89) |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V | 20 V |
| Vgs(th) (Max) @ Id | 4 V | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Box (TB) | 2000 | $ 1.22 | |
| Microchip Direct | AMMO | 1 | $ 1.61 | |
| 25 | $ 1.34 | |||
| 100 | $ 1.22 | |||
| 1000 | $ 1.01 | |||
| 5000 | $ 0.92 | |||
| 10000 | $ 0.87 | |||
VN2460 Series
MOSFET, N-Channel Enhancement-Mode, 600V, 20 Ohm
| Part | Operating Temperature [Min] | Operating Temperature [Max] | Technology | Vgs(th) (Max) @ Id | Vgs (Max) | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Supplier Device Package | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Power Dissipation (Max) | Package / Case | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microchip Technology VN2460N3-G-P003 | -55 °C | 150 °C | MOSFET (Metal Oxide) | 4 V | 20 V | N-Channel | 4.5 V, 10 V | 20 Ohm | TO-92-3 | 600 V | 150 pF | Through Hole | 1 W | TO-226-3, TO-92-3 | 160 mA |
Microchip Technology VN2460N8-G | |||||||||||||||
Microchip Technology VN2460N8-G | -55 °C | 150 °C | MOSFET (Metal Oxide) | 4 V | 20 V | N-Channel | 4.5 V, 10 V | 20 Ohm | TO-243AA (SOT-89) | 600 V | 150 pF | Surface Mount | TO-243AA | 200 mA | |
Microchip Technology VN2460N3-G-P014 | -55 °C | 150 °C | MOSFET (Metal Oxide) | 4 V | 20 V | N-Channel | 4.5 V, 10 V | 20 Ohm | TO-92-3 | 600 V | 150 pF | Through Hole | 1 W | TO-226-3, TO-92-3 | 160 mA |
Description
General part information
VN2460 Series
This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown.
Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.