Specification	SIHP7N60E-GE3

Current - Continuous Drain (Id) (Tc)	7 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	40 nC
Input Capacitance (Ciss) (Max)	680 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-220-3
Package Name	TO-220AB
Power Dissipation (Max)	78 W
Rds On (Max)	600 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max)	4 V

SIHP7 Series

Part	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Rds On (Max)	Drain to Source Voltage (Vdss)	Vgs (Max)	Vgs(th) (Max)	Technology	Gate Charge (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Mounting Type	Package Name	Power Dissipation (Max)	Current - Continuous Drain (Id) (Tc)	Input Capacitance (Ciss) (Max)	Package / Case
Vishay Dale SIHP7N60E-E3	10 V	N-Channel	600 mOhm	600 V	30 V	4 V	MOSFET (Metal Oxide)	40 nC	-55 °C	150 °C	Through Hole	TO-220AB	78 W	7 A	680 pF	TO-220-3
Vishay Dale SIHP7N60E-GE3	10 V	N-Channel	600 mOhm	600 V	30 V	4 V	MOSFET (Metal Oxide)	40 nC	-55 °C	150 °C	Through Hole	TO-220AB	78 W	7 A	680 pF	TO-220-3

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