PSMN2R8-40YSBX
ActiveN-CHANNEL 40 V, 2.8 MOHM, 160 A STANDARD LEVEL MOSFET IN LFPAK56 USING OPTIMIZED NEXTPOWERS3 SCHOTTKY-PLUS TECHNOLOGY
PSMN2R8-40YSBX
ActiveN-CHANNEL 40 V, 2.8 MOHM, 160 A STANDARD LEVEL MOSFET IN LFPAK56 USING OPTIMIZED NEXTPOWERS3 SCHOTTKY-PLUS TECHNOLOGY
Description
General part information
PSMN2R8-40YSB Series
160 A, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package, using advanced TrenchMOS Superjunction technology with optimization to provide improved EMC performance (up to 6 dB). This product has been designed and qualified for high performance power switching applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | PSMN2R8-40YSBX |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 160 A |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Feature | Schottky Diode (Body) |
| FET Type | N-Channel |
| Gate Charge (Max) | 59 nC |
| Input Capacitance (Ciss) (Max) | 4563 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | SOT-669, SC-100 |
| Package Name | LFPAK56, Power-SO8 |
| Power Dissipation (Max) | 147 W |
| Rds On (Max) | 2.8 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 3.6 V |
Pricing
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