Description
General part information
BSZ018 Series
With the OptiMOS™ 25V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. Available in halfbridge configuration (power stage 5x6).
Technical Specifications
Parameters and characteristics for this part
| Specification | BSZ018NE2LSIATMA1 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 22 A |
| Current - Continuous Drain (Id) (Tc) | 40 A |
| Drain to Source Voltage (Vdss) | 25 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 36 nC, 36 nC |
| Input Capacitance (Ciss) (Max) | 2500 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerTDFN |
| Package Name | PG-TSDSON-8-FL |
| Power Dissipation (Max) | 2.1 W, 69 W |
| Rds On (Max) | 1.8 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 2 V |
Pricing
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