Specification	IPD200N15N3GBTMA1

Current - Continuous Drain (Id) (Tc)	50 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On)	8 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	31 nC
Input Capacitance (Ciss) (Max)	1820 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Package Name	PG-TO252-3
Power Dissipation (Max)	150 W
Rds On (Max)	20 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

IPD200N Series

Part	Operating Temperature (Min)	Operating Temperature (Max)	Vgs(th) (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Input Capacitance (Ciss) (Max)	Package / Case	Current - Continuous Drain (Id) (Tc)	Package Name	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Vgs (Max)	Mounting Type	Rds On (Max)	Gate Charge (Max)	Technology	FET Type
INFINEON IPD200N15N3GBTMA1	-55 °C	175 °C	4 V	10 V	8 V	1820 pF	DPAK (2 Leads + Tab) SC-63 TO-252-3	50 A	PG-TO252-3	150 V	150 W	20 V	Surface Mount	20 mOhm	31 nC	MOSFET (Metal Oxide)	N-Channel

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